FQI19N10 100V N-Channel MOSFET

Fairchild Semiconductor

Description

FQB19N10 / FQI19N10 August 2000 QFET FQB19N10 / FQI19N10 100V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Datasheet Specifications

Part number: FQI19N10
Manufacturer: Fairchild Semiconductor
File Size: 575.40 KB
Datasheet: FQI19N10_FairchildSemiconductor.pdf
Description: 100V N-Channel MOSFET

Features

* 19A, 100V, RDS(on) = 0.1Ω @VGS = 10 V Low gate charge ( typical 19 nC) Low Crss ( typical 32 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D

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FQI19N10 100V N-Channel MOSFET Fairchild Semiconductor

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