FQI19N20C Datasheet - Fairchild Semiconductor

FQI19N20C 200V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQI19N20C Features

* 19.0A, 200V, RDS(on) = 0.17Ω @VGS = 10 V Low gate charge ( typical 40.5 nC) Low Crss ( typical 85 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ◀ {

* G S D2-PAK FQB Series I2-PAK G D S FQI Series G{ ▲

FQI19N20C_FairchildSemiconductor.pdf