FQI19N20C

200V N-Channel MOSFET

Fairchild Semiconductor

FQI19N20C Features

* 19.0A, 200V, RDS(on) = 0.17Ω @VGS = 10 V Low gate charge ( typical 40.5 nC) Low Crss ( typical 85 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ◀ {

* G S D2-PAK FQB Series I2-PAK G D S FQI Series G{ ▲

FQI19N20C General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQI19N20C Datasheet (901.97 KB)

FQI19N20C Datasheet Preview — Preview of FQI19N20C PDF

Datasheet Details

Part number:

FQI19N20C

Manufacturer:

Fairchild Semiconductor

File Size:

901.97 KB

Description:

200v n-channel mosfet.

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FQI19N20C 200V N-Channel MOSFET Fairchild Semiconductor

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FQI19N20C Features

FQI19N20C General Description

Datasheet Details

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