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FQP2NA90 - 900V N-Channel MOSFET

FQP2NA90 Description

FQP2NA90 September 2000 QFET FQP2NA90 900V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQP2NA90 Features

* 2.8A, 900V, RDS(on) = 5.8 Ω @ VGS = 10 V Low gate charge ( typical 15 nC) Low Crss ( typical 6.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G DS ! " " " TO-220 FQP Series ! S Absolute Maximum Ratings S

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900V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FQP2NA90-like datasheet

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