FQP3P20 - 200V P-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQP3P20
Manufacturer	Fairchild ↗ Semiconductor
File Size	975.57 KB
Description	200V P-Channel MOSFET
Datasheet	FQP3P20_FairchildSemiconductor.pdf

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

-2.8 A, -200 V, RDS(on) = 2.7 Ω (Max. ) @ VGS = -10 V, ID = -1.4 A.
Low Gate Charge (Typ. 6 nC).
Low Crss (Typ 7.5 pF).
100% Avalanche Tested S GDS TO-220 G D Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalan.

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Published: Apr 1, 2005 |