FQP3P20 Datasheet - Fairchild Semiconductor

200V P-Channel MOSFET

FQP3P20 Features

* -2.8 A, -200 V, RDS(on) = 2.7 Ω (Max.) @ VGS = -10 V, ID = -1.4 A

* Low Gate Charge (Typ. 6 nC)

* Low Crss (Typ 7.5 pF)

* 100% Avalanche Tested S GDS TO-220 G D Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/d

FQP3P20 General Description

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQP3P20 Datasheet (975.57 KB)

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Datasheet Details

Part number:

FQP3P20

Manufacturer:

Fairchild Semiconductor

File Size:

975.57 KB

Description:

200v p-channel mosfet.

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FQP3P20 200V P-Channel MOSFET Fairchild Semiconductor

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FQP3P20 Features

FQP3P20 General Description

Datasheet Details

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Description:

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