FQP3P20 Datasheet (Fairchild Semiconductor)

FQP3P20, 200V P-Channel MOSFET

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy

FQP3P20 Features

* -2.8 A, -200 V, RDS(on) = 2.7 Ω (Max.) @ VGS = -10 V, ID = -1.4 A

* Low Gate Charge (Typ. 6 nC)

* Low Crss (Typ 7.5 pF)

* 100% Avalanche Tested S GDS TO-220 G D Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/d