Datasheet4U Logo Datasheet4U.com

FQU13N06L N-Channel QFET MOSFET

FQU13N06L Description

FQD13N06L / FQU13N06L May 2001 QFET FQD13N06L / FQU13N06L 60V LOGIC N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQU13N06L Features

* 11A, 60V, RDS(on) = 0.115Ω @VGS = 10 V Low gate charge ( typical 4.8 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D D ! " G! G S ! " " "

📥 Download Datasheet

Preview of FQU13N06L PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • FQU1N60 - 1.3A N-Channel MOSFET (OuCan)
  • FQU1N60C - N-Channel MOSFET (HAOHAI)
  • FQU2N50B - N-Channel MOSFET (ON Semiconductor)
  • FQU2N60C - N-Channel MOSFET (ON Semiconductor)
  • FQU3N60CTU - N-Channel MOSFET (ON Semiconductor)
  • FQU4N60 - 600V 4A N-Channel MOSFET (Oucan Semi)
  • FQU4N65 - 4A N-Channel MOSFET (Oucan Semi)
  • FQU5N50CTU-WS - N-Channel MOSFET (ON Semiconductor)

📌 All Tags

N-Channel QFET MOSFET Fairchild Semiconductor
Fairchild Semiconductor FQU13N06L-like datasheet