FQU18N20V2 - 200V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQU18N20V2
Manufacturer	Fairchild ↗ Semiconductor
File Size	615.01 KB
Description	200V N-Channel MOSFET
Datasheet	FQU18N20V2_FairchildSemiconductor.pdf

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

15A, 200V, RDS(on) = 0.14Ω @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Dra.

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Published: Apr 1, 2005 |