FQU20N06L - N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQU20N06L
Manufacturer	Fairchild ↗ Semiconductor
File Size	962.06 KB
Description	N-Channel MOSFET
Datasheet	FQU20N06L_FairchildSemiconductor.pdf

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

17.2 A, 60 V, RDS(on) = 42 mΩ (Max. ) @ VGS = 10 V, ID = 8.6 A.
Low Gate Charge (Typ. 9.5 nC).
Low Crss (Typ. 35 pF).
100% Avalanche Tested.
Low Level Gate Drive Requirements Allowing Direct Operation Form Logic Drivers D GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continu.

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Published: Apr 1, 2005 |