FQU4N50 Datasheet (Fairchild Semiconductor)

FQU4N50, 500V N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy

FQU4N50 Features

* 2.6 A, 500 V, RDS(on)=2.7 Ω(Max.)@VGS=10 V, ID=1.3 A

* Low Gate Charge (Typ. 10 nC)

* Low Crss (Typ. 6.0 pF)

* 100% Avalanche Tested

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