Datasheet4U Logo Datasheet4U.com

FQU4N60 600V N-Channel MOSFET

FQU4N60 Description

FQU4N60 600V N-Channel MOSFET FQU4N60 600V N-Channel MOSFET .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQU4N60 Features

* 2.6A, 600V @TJ = 25°C
* Typ. RDS(on) = 1.0Ω
* Low gate charge (typical 12.8nC)
* Low effective output capacitance (typ ical 32pF)
* 100% avalanche tested

📥 Download Datasheet

Preview of FQU4N60 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
FQU4N60
Manufacturer
Fairchild Semiconductor
File Size
308.33 KB
Datasheet
FQU4N60-FairchildSemiconductor.pdf
Description
600V N-Channel MOSFET

📁 Related Datasheet

  • FQU4N65 - 4A N-Channel MOSFET (Oucan Semi)
  • FQU10N20 - N-Channel MOSFET (INCHANGE)
  • FQU11P06 - P-Channel MOSFET (VBsemi)
  • FQU1N60 - 1.3A N-Channel MOSFET (OuCan)
  • FQU1N60C - N-Channel MOSFET (HAOHAI)
  • FQU2N50B - N-Channel MOSFET (ON Semiconductor)
  • FQU2N60C - N-Channel MOSFET (ON Semiconductor)
  • FQU3N60CTU - N-Channel MOSFET (ON Semiconductor)

📌 All Tags

Fairchild Semiconductor FQU4N60-like datasheet