FQU4N50TU_WS Datasheet - Fairchild Semiconductor

FQU4N50TU_WS N-Channel QFET MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQU4N50TU_WS Features

* 2.6 A, 500 V, RDS(on) = 2.7 Ω (Max.) @ VGS = 10 V, ID = 1.3 A

* Low Gate Charge (Typ. 10 nC)

* Low Crss (Typ. 6.0 pF)

* 100% Avalanche Tested D GDS I-PAK Absolute Maximum Ratings TC = 25oC unless otherwise noted.

* 4 4

* ; 4 ; !5

FQU4N50TU_WS-FairchildSemiconductor.pdf