FQU4N50TU_WS - N-Channel QFET MOSFET
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy
FQU4N50TU_WS Features
* 2.6 A, 500 V, RDS(on) = 2.7 Ω (Max.) @ VGS = 10 V, ID = 1.3 A
* Low Gate Charge (Typ. 10 nC)
* Low Crss (Typ. 6.0 pF)
* 100% Avalanche Tested D GDS I-PAK Absolute Maximum Ratings TC = 25oC unless otherwise noted.
* 4 4
* ; 4 ; !5
