FQU4N50TU_WS Datasheet - Fairchild Semiconductor

FQU4N50TU_WS, N-Channel QFET MOSFET

FQU4N50TU_WS * N-Channel QFET® MOSFET FQU4N50TU_WS N-Channel QFET® MOSFET 500 V, 2.6 A, 2.7 Ω November 2013 .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

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Datasheet Details

Part number:

FQU4N50TU_WS

Manufacturer:

Fairchild Semiconductor

File Size:

908.05 KB

Description:

N-Channel QFET MOSFET

Features

* 2.6 A, 500 V, RDS(on) = 2.7 Ω (Max. ) @ VGS = 10 V, ID = 1.3 A
* Low Gate Charge (Typ. 10 nC)
* Low Crss (Typ. 6.0 pF)
* 100% Avalanche Tested D GDS I-PAK Absolute Maximum Ratings TC = 25oC unless otherwise noted.
* 4 4
* ; 4 ; !5

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