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FQU4N50TU_WS Datasheet - Fairchild Semiconductor

FQU4N50TU_WS - N-Channel QFET MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy

FQU4N50TU_WS Features

* 2.6 A, 500 V, RDS(on) = 2.7 Ω (Max.) @ VGS = 10 V, ID = 1.3 A

* Low Gate Charge (Typ. 10 nC)

* Low Crss (Typ. 6.0 pF)

* 100% Avalanche Tested D GDS I-PAK Absolute Maximum Ratings TC = 25oC unless otherwise noted. 

*  4 4

*  ; 4 ; !5

FQU4N50TU_WS-FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FQU4N50TU_WS

Manufacturer:

Fairchild Semiconductor

File Size:

908.05 KB

Description:

N-channel qfet mosfet.

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