* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as:
HGTP2N120CN Datasheet (123.09 KB)
HGTP2N120CN
Fairchild Semiconductor
123.09 KB
N-channel igbt.
HGTD2N120CNS, HGTP2N120CN, HGT1S2N120CNS
Data Sheet December 2001
13A, 1200V, NPT Series N-Channel IGBT
The HGTD2N120CNS, HGTP2N120CN, and HGT1S2N120.
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