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HGTP2N120BN Datasheet - Intersil Corporation

HGTP2N120BN_IntersilCorporation.pdf

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Datasheet Details

Part number:

HGTP2N120BN

Manufacturer:

Intersil Corporation

File Size:

85.66 KB

Description:

N-channel igbt.

HGTP2N120BN, N-Channel IGBT

HGTP2N120BN Features

* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as:

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