Part number:
HGTP2N120BN
Manufacturer:
Intersil Corporation
File Size:
85.66 KB
Description:
N-channel igbt.
HGTP2N120BN Datasheet (85.66 KB)
Datasheet Details
HGTP2N120BN Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as:
HGTP2N120BN Datasheet (85.66 KB)
Datasheet Details
HGTP2N120BN
Intersil Corporation
85.66 KB
N-channel igbt.
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HGTP2N120BN Distributor
