* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as:
HGTP2N120BN Datasheet (85.66 KB)
HGTP2N120BN
Intersil Corporation
85.66 KB
N-channel igbt.
HGTP2N120BN, HGTD2N120BNS, HGT1S2N120BNS
Data Sheet January 2000 File Number 4696.2
12A, 1200V, NPT Series N-Channel IGBT
The HGTP2N120BN, HGTD2N120B.
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