HGTP2N120BN Datasheet, Igbt, Intersil Corporation

HGTP2N120BN Features

• Igbt of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high vo

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Part number:

HGTP2N120BN

Manufacturer:

Intersil Corporation

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85.66kb

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📄 Datasheet

Description:

N-channel igbt.

HGTP2N120BN Application

• Applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and driv

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HGTP2N120BN

Intersil Corporation

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