HGTP2N120BND Datasheet - Intersil Corporation

HGTP2N120BND_IntersilCorporation.pdf

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Datasheet Details

Part number:

HGTP2N120BND

Manufacturer:

Intersil Corporation

File Size:

87.43 KB

Description:

N-channel igbt.

HGTP2N120BND, N-Channel IGBT

HGTP2N120BND Features

* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49312. The Diode used is the development type TA49056. The IGBT is ideal for many high voltage switching appl

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HGTP2N120BND N-Channel IGBT Intersil Corporation

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