* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49312. The Diode used is the development type TA49056. The IGBT is ideal for many high voltage switching appl
HGTP2N120BND Datasheet (87.43 KB)
HGTP2N120BND
Intersil Corporation
87.43 KB
N-channel igbt.
HGTP2N120BND, HGT1S2N120BNDS
Data Sheet January 2000 File Number 4698.2
12A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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