HGTP2N120CND N-Channel IGBT

Intersil Corporation

HGTP2N120CND Description

HGTP2N120CND, HGT1S2N120CNDS Data Sheet January 2000 File Number 4681.2 13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes Th.

HGTP2N120CND Features

* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49313. The Diode used is the development type TA49056 (Part number RHRD4120). The IGBT is ideal for many high

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Datasheet Details

Part number: HGTP2N120CND
Manufacturer: Intersil Corporation
File Size: 92.96 KB
Datasheet: HGTP2N120CND_IntersilCorporation.pdf
Description: N-Channel IGBT

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N-Channel IGBT Intersil Corporation

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