Part number:
HGTP2N120CND
Manufacturer:
Intersil Corporation
File Size:
92.96 KB
Description:
N-channel igbt.
HGTP2N120CND Datasheet (92.96 KB)
Datasheet Details
HGTP2N120CND Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49313. The Diode used is the development type TA49056 (Part number RHRD4120). The IGBT is ideal for many high
HGTP2N120CND Datasheet (92.96 KB)
Datasheet Details
HGTP2N120CND
Intersil Corporation
92.96 KB
N-channel igbt.
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