HUFA75429D3S Datasheet - Fairchild Semiconductor

HUFA75429D3S N-Channel MOSFET

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves very low on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhib.

HUFA75429D3S Features

* 175°C Maximum Junction Temperature

* UIS Capability (Single Pulse and Repetitive Pulse)

* Ultra-Low On-Resistance rDS(ON) = 0.025Ω, VGS = 10V DRAIN (FLANGE) D GATE SOURCE G S TO-252 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain

HUFA75429D3S Datasheet (290.76 KB)