HUFA75429D3S Datasheet - Fairchild Semiconductor

N-Channel MOSFET

HUFA75429D3S Features

* 175°C Maximum Junction Temperature

* UIS Capability (Single Pulse and Repetitive Pulse)

* Ultra-Low On-Resistance rDS(ON) = 0.025Ω, VGS = 10V DRAIN (FLANGE) D GATE SOURCE G S TO-252 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain

HUFA75429D3S General Description

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves very low on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhib.

HUFA75429D3S Datasheet (290.76 KB)

HUFA75429D3S Datasheet Preview — Preview of HUFA75429D3S PDF

Datasheet Details

Part number:

HUFA75429D3S

Manufacturer:

Fairchild Semiconductor

File Size:

290.76 KB

Description:

N-channel mosfet.

📁 Related Datasheet

HUFA75433S3S N-Channel MOSFET (Fairchild Semiconductor)

HUFA75307D3 N-Channel MOSFET (Fairchild Semiconductor)

HUFA75307D3S N-Channel MOSFET (Fairchild Semiconductor)

HUFA75307P3 N-Channel MOSFET (Fairchild Semiconductor)

HUFA75307T3ST N-Channel MOSFET (Fairchild Semiconductor)

HUFA75309D3 N-Channel MOSFET (Fairchild Semiconductor)

HUFA75309D3S N-Channel MOSFET (Fairchild Semiconductor)

HUFA75309P3 N-Channel MOSFET (Fairchild Semiconductor)

HUFA75309T3ST N-Channel MOSFET (Fairchild Semiconductor)

HUFA75321D3 N-Channel MOSFET (Fairchild Semiconductor)

TAGS

HUFA75429D3S N-Channel MOSFET Fairchild Semiconductor

Image Gallery

HUFA75429D3S Features

HUFA75429D3S General Description

Datasheet Details

File Size:

Description:

HUFA75429D3S Distributor