HUFA75429D3S N-Channel MOSFET

Fairchild Semiconductor

Description

HUFA75429D3S March 2002 HUFA75429D3S N-Channel UltraFET® MOSFETs 60V, 20A, 25mΩ General .
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process.

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Datasheet Specifications

Part number: HUFA75429D3S
Manufacturer: Fairchild Semiconductor
File Size: 290.76 KB
Datasheet: HUFA75429D3S_FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* 175°C Maximum Junction Temperature
* UIS Capability (Single Pulse and Repetitive Pulse)
* Ultra-Low On-Resistance rDS(ON) = 0.025Ω, VGS = 10V DRAIN (FLANGE) D GATE SOURCE G S TO-252 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain

Applications

* where power efficiency is important, such as switching regulators, switching convertors, motor drivers, relay drivers, low-voltage bus switches. Applications
* Motor & Load Control

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HUFA75429D3S N-Channel MOSFET Fairchild Semiconductor

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