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IRF640A

Advanced Power MOSFET

IRF640A Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 Ω(Typ.) 1 2 3 IRF640A BVDSS = 200 V RDS(on) = 0.18 Ω ID = 18 A TO-220 1.Gate 2. Drain 3. Source

IRF640A Datasheet (260.95 KB)

Preview of IRF640A PDF

Datasheet Details

Part number:

IRF640A

Manufacturer:

Fairchild Semiconductor

File Size:

260.95 KB

Description:

Advanced power mosfet.

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TAGS

IRF640A Advanced Power MOSFET Fairchild Semiconductor

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