IRFD120 Datasheet - Fairchild Semiconductor

IRFD120 N-Channel Power MOSFET

IRFD120 Data Sheet January 2002 1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and lo.

IRFD120 Features

* 1.3A, 100V

* rDS(ON) = 0.300Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literature - TB334 “Guidelines for

IRFD120 Datasheet (91.27 KB)

IRFD120 Datasheet Preview — Preview of IRFD120 PDF

Datasheet Details

Part number:

IRFD120

Manufacturer:

Fairchild Semiconductor

File Size:

91.27 KB

Description:

N-channel power mosfet.

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IRFD120 N-Channel Power MOSFET Fairchild Semiconductor

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