IRFD220 N-Channel Power MOSFET

Fairchild Semiconductor

Description

IRFD220 Data Sheet January 2002 0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power ﬁeld effect transist.

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Datasheet Specifications

Part number: IRFD220
Manufacturer: Fairchild Semiconductor
File Size: 91.00 KB
Datasheet: IRFD220_FairchildSemiconductor.pdf
Description: N-Channel Power MOSFET

Features

* 0.8A, 200V
* rDS(ON) = 0.800Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334 “Guidelines for

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IRFD220 N-Channel Power MOSFET Fairchild Semiconductor

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