IRFD220 Datasheet - Fairchild Semiconductor

IRFD220 N-Channel Power MOSFET

IRFD220 Data Sheet January 2002 0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power ﬁeld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requ.

IRFD220 Features

* 0.8A, 200V

* rDS(ON) = 0.800Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literature - TB334 “Guidelines for

IRFD220_FairchildSemiconductor.pdf

IRFD220 Datasheet Preview — Preview of IRFD220 PDF

Datasheet Details

Part number:

IRFD220

Manufacturer:

Fairchild Semiconductor

File Size:

91.00 KB

Description:

N-channel power mosfet.

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IRFD220 IRFD220 N-Channel Power MOSFET Fairchild Semiconductor

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