IRFD9110 P-Channel Power MOSFET

Fairchild Semiconductor

Description

IRFD9110 Data Sheet January 2002 0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power ﬁeld effect transis.

📥 Download Datasheet

IRFD9110 Datasheet Preview — Preview of IRFD9110 PDF

Datasheet Specifications

Part number: IRFD9110
Manufacturer: Fairchild Semiconductor
File Size: 93.96 KB
Datasheet: IRFD9110_FairchildSemiconductor.pdf
Description: P-Channel Power MOSFET

Features

* 0.7A, 100V
* rDS(ON) = 1.200Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance Symbol D Ordering Information PART NUMBER IRFD9110

IRFD9110 Distributors

📁 Related Datasheet

IRFD9110PbF IRFD9113 IRFD9120 IRFD9120PbF IRFD9123 IRFD9014

📌 All Tags

IRFD9110 P-Channel Power MOSFET Fairchild Semiconductor

Fairchild Semiconductor IRFD9110-like datasheet