IRFD9110 Datasheet - Fairchild Semiconductor

IRFD9110 P-Channel Power MOSFET

IRFD9110 Data Sheet January 2002 0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power ﬁeld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors req.

IRFD9110 Features

* 0.7A, 100V

* rDS(ON) = 1.200Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance Symbol D Ordering Information PART NUMBER IRFD9110

IRFD9110_FairchildSemiconductor.pdf

IRFD9110 Datasheet Preview — Preview of IRFD9110 PDF

Datasheet Details

Part number:

IRFD9110

Manufacturer:

Fairchild Semiconductor

File Size:

93.96 KB

Description:

P-channel power mosfet.

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IRFD9110 IRFD9110 P-Channel Power MOSFET Fairchild Semiconductor

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