IRFW740B Datasheet (Fairchild Semiconductor)

IRFW740B, 400V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a

IRFW740B Features

* 10A, 400V, RDS(on) = 0.54Ω @VGS = 10 V

* Low gate charge ( typical 41 nC)

* Low Crss ( typical 35 pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability D GS D2-PAK IRFW Series GDS I2-PAK IRFI Series Absolute Maximum Ratings T