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IRFW710S - Power MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number: IRFW710S
Manufacturer: Fairchild Semiconductor
File Size: 224.05 KB
Datasheet: IRFW710S-FairchildSemiconductor.pdf
Description: Power MOSFET

IRFW710S Product details

Features

Avalanche Rugged Technology.
Rugged Gate Oxide Technology.
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
Lower Leakage Current: 10µA (Max. ) @ VDS = 400V.
Low RDS(ON): 2.815Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed (1).

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Power MOSFET Fairchild Semiconductor

Fairchild Semiconductor IRFW710S-like datasheet

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