IRFW710S - Power MOSFET
IRFW710S Features
* Avalanche Rugged Technology
* Rugged Gate Oxide Technology
* Lower Input Capacitance
* Improved Gate Charge
* Extended Safe Operating Area
* Lower Leakage Current: 10µA (Max.) @ VDS = 400V
* Low RDS(ON): 2.815Ω (Typ.) Absolute Maximum Rating
