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IRFW720B

400V N-Channel MOSFET

IRFW720B Features

* 3.3A, 400V, RDS(on) = 1.75Ω @VGS = 10 V

* Low gate charge ( typical 14 nC)

* Low Crss ( typical 11 pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability D GS D2-PAK IRFW Series GDS I2-PAK IRFI Series Absolute Maximum Ratings

IRFW720B General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRFW720B Datasheet (663.80 KB)

Preview of IRFW720B PDF

Datasheet Details

Part number:

IRFW720B

Manufacturer:

Fairchild Semiconductor

File Size:

663.80 KB

Description:

400v n-channel mosfet.

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TAGS

IRFW720B 400V N-Channel MOSFET Fairchild Semiconductor

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