Datasheet4U Logo Datasheet4U.com

IRFW730B

400V N-Channel MOSFET

IRFW730B Features

* 5.5A, 400V, RDS(on) = 1.0Ω @VGS = 10 V

* Low gate charge ( typical 25 nC)

* Low Crss ( typical 20 pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability D GS D2-PAK IRFW Series GDS I2-PAK IRFI Series Absolute Maximum Ratings T

IRFW730B General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRFW730B Datasheet (678.64 KB)

Preview of IRFW730B PDF

Datasheet Details

Part number:

IRFW730B

Manufacturer:

Fairchild Semiconductor

File Size:

678.64 KB

Description:

400v n-channel mosfet.

📁 Related Datasheet

IRFW730A Power MOSFET (Samsung)

IRFW730S Power MOSFET (Fairchild Semiconductor)

IRFW710A Power MOSFET (Fairchild Semiconductor)

IRFW710B 400V N-Channel MOSFET (Fairchild Semiconductor)

IRFW710S Power MOSFET (Fairchild Semiconductor)

IRFW720A Power MOSFET (Samsung)

IRFW720B 400V N-Channel MOSFET (Fairchild Semiconductor)

IRFW720S Power MOSFET (Fairchild Semiconductor)

IRFW740A Advanced Power MOSFET (Fairchild Semiconductor)

IRFW740B 400V N-Channel MOSFET (Fairchild Semiconductor)

TAGS

IRFW730B 400V N-Channel MOSFET Fairchild Semiconductor

Image Gallery

IRFW730B Datasheet Preview Page 2 IRFW730B Datasheet Preview Page 3

IRFW730B Distributor