IRFW730B Datasheet - Fairchild Semiconductor

IRFW730B 400V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRFW730B Features

* 5.5A, 400V, RDS(on) = 1.0Ω @VGS = 10 V

* Low gate charge ( typical 25 nC)

* Low Crss ( typical 20 pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability D GS D2-PAK IRFW Series GDS I2-PAK IRFI Series Absolute Maximum Ratings T

IRFW730B-FairchildSemiconductor.pdf