IRFW710B Datasheet - Fairchild Semiconductor

IRFW710B, 400V N-Channel MOSFET

IRFW710B / IRFI710B November 2001 IRFW710B / IRFI710B 400V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

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Datasheet Details

Part number:

IRFW710B

Manufacturer:

Fairchild Semiconductor

File Size:

646.30 KB

Description:

400V N-Channel MOSFET

Features

* 2.0A, 400V, RDS(on) = 3.4Ω @VGS = 10 V
* Low gate charge ( typical 7.7 nC)
* Low Crss ( typical 6.0 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability D GS D2-PAK IRFW Series GDS I2-PAK IRFI Series Absolute Maximum Ratings

IRFW710B Distributors

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IRFW710B 400V N-Channel MOSFET Fairchild Semiconductor

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