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IRFW710B

400V N-Channel MOSFET

IRFW710B Features

* 2.0A, 400V, RDS(on) = 3.4Ω @VGS = 10 V

* Low gate charge ( typical 7.7 nC)

* Low Crss ( typical 6.0 pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability D GS D2-PAK IRFW Series GDS I2-PAK IRFI Series Absolute Maximum Ratings

IRFW710B General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the a.

IRFW710B Datasheet (646.30 KB)

Preview of IRFW710B PDF

Datasheet Details

Part number:

IRFW710B

Manufacturer:

Fairchild Semiconductor

File Size:

646.30 KB

Description:

400v n-channel mosfet.

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TAGS

IRFW710B 400V N-Channel MOSFET Fairchild Semiconductor

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