IRFW710B - 400V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

2.0A, 400V, RDS(on) = 3.4Ω @VGS = 10 V.
Low gate charge ( typical 7.7 nC).
Low Crss ( typical 6.0 pF).
Fast switching.
100% avalanche tested.
Improved dv/dt capability D GS D2-PAK IRFW Series GDS I2-PAK IRFI Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, Tstg TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain C.

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