MPSA29 Datasheet - Fairchild Semiconductor

MPSA29 NPN Darlington Transistor

MPSA29 Discrete POWER & Signal Technologies MPSA29 C BE TO-92 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03. See MPSA28 for characteristics. Absolute Maximum Ratings Symbol VCES VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 100 100 12 800 -55 .

MPSA29 Datasheet (23.37 KB)