TIP111 Datasheet - Fairchild Semiconductor

TIP111 NPN Epitaxial Silicon Darlington Transistor

TIP111 Features

* Monolithic Construction with Built-in Base-Emitter Shunt Resistors

* Complementary to TIP115 / TIP116 / TIP117

* High DC Current Gain: hFE = 1000 @ VCE = 4 V, IC = 1 A (Minimum)

* Low Collector-Emitter Saturation Voltage

* Industrial Use Ordering Information

Datasheet Details

TIP111

Fairchild Semiconductor

210.65 KB

Npn epitaxial silicon darlington transistor.

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