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TIP111 - NPN Epitaxial Silicon Darlington Transistor

Features

  • Monolithic Construction with Built-in Base-Emitter Shunt Resistors.
  • Complementary to TIP115 / TIP116 / TIP117.
  • High DC Current Gain: hFE = 1000 @ VCE = 4 V, IC = 1 A (Minimum).
  • Low Collector-Emitter Saturation Voltage.
  • Industrial Use Ordering Information Equivalent Circuit C B 1 TO-220 1.Base 2.Collector 3.Emitter R1 ≅Ω ≅Ω R2 E Part Number TIP110 TIP110TU TIP111TU TIP112 TIP112TU Top Mark TIP110 TIP110 TIP111 TIP112 TIP112 Package TO-220 3L (.

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TIP110 / TIP111 / TIP112 — NPN Epitaxial Silicon Darlington Transistor November 2014 TIP110 / TIP111 / TIP112 NPN Epitaxial Silicon Darlington Transistor Features • Monolithic Construction with Built-in Base-Emitter Shunt Resistors • Complementary to TIP115 / TIP116 / TIP117 • High DC Current Gain: hFE = 1000 @ VCE = 4 V, IC = 1 A (Minimum) • Low Collector-Emitter Saturation Voltage • Industrial Use Ordering Information Equivalent Circuit C B 1 TO-220 1.Base 2.Collector 3.
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