Part number: G40N150D
Manufacturer: Fairchild
File Size: 465.48KB
Download: 📄 Datasheet
Description: FGL40N150D
Part number: G40N150D
Manufacturer: Fairchild
File Size: 465.48KB
Download: 📄 Datasheet
Description: FGL40N150D
*
*
*
* High speed switching Low saturation voltage : VCE(sat) = 3.5 V @ IC = 40A High input impedance Built-in fast recovery diode
Applications
Home app.
Features
*
*
*
* High speed switching Low saturation voltage : VCE(sat) = 3.5 V @ IC = 40A High input .
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. The FGL40N150D is designed for induction heating applications.
Features
*
*
*
* High speed switching Low saturation voltage : VCE(sat).
Image gallery
TAGS
📁 Related Datasheet
G40N120CE - TSG40N120CE
(Taiwan Semiconductor)
TO-264
Pin Definition: 1. Gate 2. Collector 3. Emitter
TSG40N120CE
N-Channel IGBT with FRD.
PRODUCT SUMMARY
VCES (V)
VGES (V)
1200
±20
IC (A)
.
G40N03A - N-Channel Enhancement Mode Power MOSFET
(GFD)
GOFORD
N-Channel Enhancement Mode Power MOSFET
Description
The G40N03A uses advanced trench technology and design to provide excellent RDS(ON) with lo.
G40N60 - Ultrafast IGBT
(Fairchild Semiconductor)
SGH40N60UFD
SGH40N60UFD
Ultra-Fast IGBT
IGBT
General Description
Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low .
G40N60A4 - HGTG40N60A4
(Fairchild Semiconductor)
HGTG40N60A4
Data Sheet August 2003 File Number
600V, SMPS Series N-Channel IGBT
The HGTG40N60A4 is a MOS gated high voltage switching device combinin.
G40N60C3 - HGTG40N60C3
(Fairchild Semiconductor)
HGTG40N60C3
Data Sheet December 2001
75A, 600V, UFS Series N-Channel IGBT
The HGTG40N60C3 is a MOS gated high voltage switching device combining the .
G40N60UFD - FGA40N60UFD
(Fairchild Semiconductor)
FGA40N60UFD
IGBT
FGA40N60UFD
Ultrafast IGBT
General Description
Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low con.
G40 - Voltage-Controlled Attenuator Module
(MACOM)
G40/SMG 40
Voltage-Controlled Attenuator Module 500 to 4000 MHz
Rev. V4
Features
WIDE BAND PERFORMANCE EXCELLENT INSERTION LOSS: < 3.0 dB (TYP..
G4000EC450 - Anode Shorted Gate Turn-Off Thyristor
(IXYS)
WESTCODE
An IXYS Company
Date:- 27 Sep, 2004 Data Sheet Issue:- 1
Anode Shorted Gate Turn-Off Thyristor Type G4000EC450
Absolute Maximum Ratings
V.
G4000EF250 - Anode Shorted Gate Turn-Off Thyristor
(IXYS)
Date:- 2nd October, 2020 Data Sheet Issue:- A1
Anode Shorted Gate Turn-Off Thyristor Types G4000EF250
Absolute Maximum Ratings
VDRM VRSM VDC-link V.
G400P06 - P-Channel Enhancement Mode Power MOSFET
(GOFORD)
G400P06T
P-Channel Enhancement Mode Power MOSFET
Description
The G400P06T uses advanced trench technology to provide
excellent RDS(ON) , low gate ch.