* of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applicatio
G40N60C3 Datasheet (146.74 KB)
G40N60C3
Fairchild Semiconductor
146.74 KB
Hgtg40n60c3.
HGTG40N60C3 Data Sheet December 2001 75A, 600V, UFS Series N-Channel IGBT The HGTG40N60C3 is a MOS gated high voltage switching device combining the .
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