G40N120CE Datasheet - Taiwan Semiconductor

G40N120CE, TSG40N120CE

TO-264 Pin Definition: 1.Gate 2.Collector 3.Emitter TSG40N120CE N-Channel IGBT with FRD.PRODUCT SUMMARY VCES (V) VGES (V) 1200 ±20 IC (A) .
The TSG40N120CE using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances,.

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G40N120CE-TaiwanSemiconductor.pdf

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Datasheet Details

Part number:

G40N120CE

Manufacturer:

Taiwan Semiconductor

File Size:

649.41 KB

Description:

TSG40N120CE

Features

* Block Diagram
* 1200V NPT Trench Technology
* High Speed Switching
* Low Conduction Loss Ordering Information Part No. TSG40N120CE C0 Package TO-264 Packing 25pcs / Tube NPT Trench IGBT Absolute Maximum Rating (TA=25oC unless otherwise noted) Parameter Symbol Collector-Emitter

Applications

* Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 9/10 Version: B12 TSG40N120CE N-Channel IGBT with FRD. 10/10 Version: B12

G40N120CE Distributors

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G40N120CE TSG40N120CE Taiwan Semiconductor

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