G40N120CE - TSG40N120CE

Product Overview

Taiwan Semiconductor

Datasheet Details

Part number	G40N120CE
Manufacturer	Taiwan Semiconductor
File Size	649.41 KB
Description	TSG40N120CE
Datasheet	G40N120CE Datasheet
Additional preview pages of the G40N120CE datasheet.

Product details

Description

The TSG40N120CE using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

Features

Block Diagram.
1200V NPT Trench Technology.
High Speed Switching.
Low Conduction Loss Ordering Information Part No. TSG40N120CE C0 Package TO-264 Packing 25pcs / Tube NPT Trench IGBT Absolute Maximum Rating (TA=25oC unless otherwise noted) Parameter Symbol Collector-Emitter Voltage Gate-Emitter Voltage Continuous Current TC=25oC TC=100oC VCES VGES IC Pulsed Collector Current.
Diode Forward Current (TC=100℃) Diode Pulse Forward Current Max Power Dissipation TJ.

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Published: Jun 23, 2015 |