G40N120CE Datasheet - Taiwan Semiconductor

G40N120CE TSG40N120CE

The TSG40N120CE using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction he.

G40N120CE Features

* Block Diagram

* 1200V NPT Trench Technology

* High Speed Switching

* Low Conduction Loss Ordering Information Part No. TSG40N120CE C0 Package TO-264 Packing 25pcs / Tube NPT Trench IGBT Absolute Maximum Rating (TA=25oC unless otherwise noted) Parameter Symbol Collector-Emitter

G40N120CE Datasheet (649.41 KB)