NDH8301N Dual N-Channel MOSFET

Fairchild

Description

December 1996 NDH8301N Dual N-Channel Enhancement Mode Field Effect Transistor General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

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Datasheet Specifications

Part number: NDH8301N
Manufacturer: Fairchild
File Size: 211.77 KB
Datasheet: NDH8301N_FairchildSemiconductor.pdf
Description: Dual N-Channel MOSFET

Features

* 3 A, 20 V. RDS(ON) = 0.06 Ω @ VGS = 4.5 V RDS(ON) = 0.075 Ω @ VGS = 2.7 V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability

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