NDH8301N Datasheet - Fairchild

NDH8301N, Dual N-Channel MOSFET

December 1996 NDH8301N Dual N-Channel Enhancement Mode Field Effect Transistor General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

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Datasheet Details

Part number:

NDH8301N

Manufacturer:

Fairchild

File Size:

211.77 KB

Description:

Dual N-Channel MOSFET

Features

* 3 A, 20 V. RDS(ON) = 0.06 Ω @ VGS = 4.5 V RDS(ON) = 0.075 Ω @ VGS = 2.7 V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability

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