Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
Features
- 3 A, 20 V. RDS(ON) = 0.06 Ω @ VGS = 4.5 V RDS(ON) = 0.075 Ω @ VGS = 2.7 V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. ____________________________________________________________________________________________
5
4 3 2
1
6
7 8
Absolute Maximum Ratings T A = 25°C unless otherwise note
Symbol VDSS VGSS ID PD TJ,.
NDH8301N_FairchildSemiconductor.pdf
