NDH8301N

Dual N-Channel MOSFET

Fairchild

NDH8301N Features

* 3 A, 20 V. RDS(ON) = 0.06 Ω @ VGS = 4.5 V RDS(ON) = 0.075 Ω @ VGS = 2.7 V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability

NDH8301N General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications su.

NDH8301N Datasheet (211.77 KB)

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Datasheet Details

Part number:

NDH8301N

Manufacturer:

Fairchild

File Size:

211.77 KB

Description:

Dual n-channel mosfet.

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NDH8301N Dual N-Channel MOSFET Fairchild

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NDH8301N Features

NDH8301N General Description

Datasheet Details

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