Description
SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
Features
- -2.7 A, -20 V. RDS(ON) = 0.07 Ω @ VGS = -4.5 V RDS(ON) = 0.095 Ω @ VGS = -2.7 V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. ___________________________________________________________________________________________
5 6 7 8
4 3 2 1
Absolute Maximum Ratings T A = 25°C unless otherwise noted
Symbol VDSS VGSS ID P.
NDH8304_FairchildSemiconductor.pdf
