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NDH8304

Dual P-Channel MOSFET

NDH8304 Features

* -2.7 A, -20 V. RDS(ON) = 0.07 Ω @ VGS = -4.5 V RDS(ON) = 0.095 Ω @ VGS = -2.7 V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capa

NDH8304 General Description

SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applicat.

NDH8304 Datasheet (71.00 KB)

Preview of NDH8304 PDF

Datasheet Details

Part number:

NDH8304

Manufacturer:

Fairchild

File Size:

71.00 KB

Description:

Dual p-channel mosfet.

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NDH8304 Dual P-Channel MOSFET Fairchild

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