NDH8304 Datasheet (Fairchild) - Dual P-Channel MOSFET

NDH8304, Dual P-Channel MOSFET

SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage applicat

NDH8304 Features

* -2.7 A, -20 V. RDS(ON) = 0.07 Ω @ VGS = -4.5 V RDS(ON) = 0.095 Ω @ VGS = -2.7 V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capa