NDH8320C Datasheet - Fairchild

NDH8320C Dual N&P-Channel MOSFET

These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices.

NDH8320C Features

* N-Channel 3 A, 20 V, RDS(ON)=0.06 Ω @ VGS=4.5 V RDS(ON)=0.075 Ω @ VGS=2.7 V P-Channel -2A, -20V, RDS(ON)=0.13 Ω @ VGS=-4.5 V RDS(ON)=0.19 Ω @ VGS=-2.7 V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for ext

NDH8320C_FairchildSemiconductor.pdf