NDH832P P-Channel MOSFET

Fairchild

Description

June 1996 NDH832P P-Channel Enhancement Mode Field Effect Transistor General .
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

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Datasheet Specifications

Part number: NDH832P
Manufacturer: Fairchild
File Size: 82.38 KB
Datasheet: NDH832P_FairchildSemiconductor.pdf
Description: P-Channel MOSFET

Features

* -4.2A, -20V. RDS(ON) = 0.06Ω @ VGS = -4.5V RDS(ON) = 0.08Ω @ VGS = -2.7V. High density cell design for extremely low RDS(ON). Enhanced SuperSOTTM-8 small outline surface mount package with high power and current handling capability. __________________________________________________________________

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