Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
Features
- -4.2A, -20V. RDS(ON) = 0.06Ω @ VGS = -4.5V RDS(ON) = 0.08Ω @ VGS = -2.7V. High density cell design for extremely low RDS(ON). Enhanced SuperSOTTM-8 small outline surface mount package with high power and current handling capability. ___________________________________________________________________________________________
5 6 7 8
4 3 2 1
Absolute Maximum Ratings
Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed PD
T A = 25°C unless o.
NDH832P_FairchildSemiconductor.pdf
