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NDH832P

P-Channel MOSFET

NDH832P Features

* -4.2A, -20V. RDS(ON) = 0.06Ω @ VGS = -4.5V RDS(ON) = 0.08Ω @ VGS = -2.7V. High density cell design for extremely low RDS(ON). Enhanced SuperSOTTM-8 small outline surface mount package with high power and current handling capability. __________________________________________________________________

NDH832P General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particul.

NDH832P Datasheet (82.38 KB)

Preview of NDH832P PDF

Datasheet Details

Part number:

NDH832P

Manufacturer:

Fairchild

File Size:

82.38 KB

Description:

P-channel mosfet.

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NDH832P P-Channel MOSFET Fairchild

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