NDH8321C Datasheet - Fairchild

NDH8321C Dual N&P-Channel MOSFET

These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices.

NDH8321C Features

* N-Ch 3.8 A, 20 V, RDS(ON)=0.035 Ω @ VGS= 4.5 V RDS(ON)=0.045 Ω @ VGS=2.7 V P-Ch -2.7 A, -20V, RDS(ON)=0.07Ω @ VGS= -4.5 V RDS(ON)=0.095 Ω @ VGS= -2.7 V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extr

NDH8321C_FairchildSemiconductor.pdf