NDH8303N Datasheet (Fairchild) - Dual N-Channel MOSFET

NDH8303N, Dual N-Channel MOSFET

SuperSOTTM-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage applicat

NDH8303N Features

* 3.8 A, 20 V. RDS(ON) = 0.035 Ω @ VGS = 4.5 V RDS(ON) = 0.045 Ω @ VGS = 2.7 V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capabil