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NDH8303N

Dual N-Channel MOSFET

NDH8303N Features

* 3.8 A, 20 V. RDS(ON) = 0.035 Ω @ VGS = 4.5 V RDS(ON) = 0.045 Ω @ VGS = 2.7 V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capabil

NDH8303N General Description

SuperSOTTM-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applicat.

NDH8303N Datasheet (72.45 KB)

Preview of NDH8303N PDF

Datasheet Details

Part number:

NDH8303N

Manufacturer:

Fairchild

File Size:

72.45 KB

Description:

Dual n-channel mosfet.

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NDH8303N Dual N-Channel MOSFET Fairchild

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