Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
Features
- 5.8A, 20V. RDS(ON) = 0.03Ω @ VGS = 4.5V RDS(ON) = 0.04Ω @ VGS = 2.7V. High density cell design for extremely low RDS(ON). Enhanced SuperSOTTM-8 small outline surface mount package with high power and current handling capability. ____________________________________________________________________________________________
5 6 7 8
4 3 2 1
Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuou.
NDH831N_FairchildSemiconductor.pdf
