NDH831N N-Channel MOSFET

Fairchild

Description

July 1996 NDH831N N-Channel Enhancement Mode Field Effect Transistor General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

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Datasheet Specifications

Part number: NDH831N
Manufacturer: Fairchild
File Size: 221.88 KB
Datasheet: NDH831N_FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* 5.8A, 20V. RDS(ON) = 0.03Ω @ VGS = 4.5V RDS(ON) = 0.04Ω @ VGS = 2.7V. High density cell design for extremely low RDS(ON). Enhanced SuperSOTTM-8 small outline surface mount package with high power and current handling capability. _____________________________________________________________________

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