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NDH831N

N-Channel MOSFET

NDH831N Features

* 5.8A, 20V. RDS(ON) = 0.03Ω @ VGS = 4.5V RDS(ON) = 0.04Ω @ VGS = 2.7V. High density cell design for extremely low RDS(ON). Enhanced SuperSOTTM-8 small outline surface mount package with high power and current handling capability. _____________________________________________________________________

NDH831N General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particul.

NDH831N Datasheet (221.88 KB)

Preview of NDH831N PDF

Datasheet Details

Part number:

NDH831N

Manufacturer:

Fairchild

File Size:

221.88 KB

Description:

N-channel mosfet.

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NDH831N N-Channel MOSFET Fairchild

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