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NDH833N

N-Channel MOSFET

NDH833N Features

* 7.1 A, 20 V. RDS(ON) = 0.020 Ω @ VGS = 4.5 V RDS(ON) = 0.025 Ω @ VGS = 2.7 V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capabil

NDH833N General Description

SuperSOT -8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are pa.

NDH833N Datasheet (221.97 KB)

Preview of NDH833N PDF

Datasheet Details

Part number:

NDH833N

Manufacturer:

Fairchild

File Size:

221.97 KB

Description:

N-channel mosfet.

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NDH833N N-Channel MOSFET Fairchild

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