NDH834P - P-Channel MOSFET

Product Overview

Fairchild

Datasheet Details

Part number	NDH834P
Manufacturer	Fairchild
File Size	82.24 KB
Description	P-Channel MOSFET
Datasheet	NDH834P Datasheet
Additional preview pages of the NDH834P datasheet.

Product details

Description

SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

Features

-5.6 A, -20 V. RDS(ON) = 0.035 Ω @ VGS = -4.5 V RDS(ON) = 0.045 Ω @ VGS = -2.7V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. ____________________________________________________________________________________________ 5 6 7 8 4 3 2 1 Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gat.

📁 Similar Datasheet

NDHA500APAE1 - Aquamarine Laser Diode (ETC)

Other Datasheets by Fairchild

NDH8301N - Dual N-Channel MOSFET
NDH8303N - Dual N-Channel MOSFET
NDH8304 - Dual P-Channel MOSFET
NDH8304P - Dual P-Channel MOSFET
NDH831N - N-Channel MOSFET
NDH8320C - Dual N&P-Channel MOSFET

Published: May 12, 2005 |