NDH834P Datasheet - Fairchild

NDH834P, P-Channel MOSFET

May 1997 NDH834P P-Channel Enhancement Mode Field Effect Transistor General ...
SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

Features

* -5.6 A, -20 V. RDS(ON) = 0.035 Ω @ VGS = -4.5 V RDS(ON) = 0.045 Ω @ VGS = -2.7V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capa

NDH834P_FairchildSemiconductor.pdf