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NDH8503N

Dual N-Channel MOSFET

NDH8503N Features

* 3.8 A, 30 V. RDS(ON) = 0.033 Ω @ VGS = 10 V RDS(ON) = 0.05 Ω @ VGS = 4.5 V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capabilit

NDH8503N General Description

SuperSOT -8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applicati.

NDH8503N Datasheet (70.86 KB)

Preview of NDH8503N PDF

Datasheet Details

Part number:

NDH8503N

Manufacturer:

Fairchild

File Size:

70.86 KB

Description:

Dual n-channel mosfet.

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NDH8503N Dual N-Channel MOSFET Fairchild

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