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NDH8503N Dual N-Channel MOSFET

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Description

May 1997 NDH8503N Dual N-Channel Enhancement Mode Field Effect Transistor General .
SuperSOT -8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

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Features

* 3.8 A, 30 V. RDS(ON) = 0.033 Ω @ VGS = 10 V RDS(ON) = 0.05 Ω @ VGS = 4.5 V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capabilit

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