Description
SuperSOT -8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
Features
- 3.8 A, 30 V. RDS(ON) = 0.033 Ω @ VGS = 10 V RDS(ON) = 0.05 Ω @ VGS = 4.5 V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. ____________________________________________________________________________________________
5 6 7 8
4 3 2 1
Absolute Maximum Ratings T A = 25°C unless otherwise note
Symbol VDSS VGSS ID PD TJ,.
NDH8503N_FairchildSemiconductor.pdf
