NDH8504P Dual P-Channel MOSFET

Fairchild

Description

February 1997 NDH8504P Dual P-Channel Enhancement Mode Field Effect Transistor General .
SuperSOT -8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

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Datasheet Specifications

Part number: NDH8504P
Manufacturer: Fairchild
File Size: 210.78 KB
Datasheet: NDH8504P_FairchildSemiconductor.pdf
Description: Dual P-Channel MOSFET

Features

* -2.7 A, -30 V. RDS(ON) = 0.07Ω @ VGS = -10 V RDS(ON) = 0.115 Ω @ VGS = -4.5 V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capabi

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