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NDH8504P

Dual P-Channel MOSFET

NDH8504P Features

* -2.7 A, -30 V. RDS(ON) = 0.07Ω @ VGS = -10 V RDS(ON) = 0.115 Ω @ VGS = -4.5 V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capabi

NDH8504P General Description

SuperSOT -8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applicati.

NDH8504P Datasheet (210.78 KB)

Preview of NDH8504P PDF

Datasheet Details

Part number:

NDH8504P

Manufacturer:

Fairchild

File Size:

210.78 KB

Description:

Dual p-channel mosfet.

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NDH8504P Dual P-Channel MOSFET Fairchild

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