Description
SuperSOT -8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
Features
- -2.7 A, -30 V. RDS(ON) = 0.07Ω @ VGS = -10 V RDS(ON) = 0.115 Ω @ VGS = -4.5 V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. ___________________________________________________________________________________________
5
4 3 2
1
6
7 8
Absolute Maximum Ratings T A = 25°C unless otherwise noted
Symbol VDSS VGSS ID PD.
NDH8504P_FairchildSemiconductor.pdf
