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NDH854P

P-Channel MOSFET

NDH854P Features

* -5.1 A, -30 V. RDS(ON) = 0.032 Ω @ VGS = -10 V RDS(ON) = 0.052 Ω @ VGS = -4.5V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capab

NDH854P General Description

SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are p.

NDH854P Datasheet (85.87 KB)

Preview of NDH854P PDF

Datasheet Details

Part number:

NDH854P

Manufacturer:

Fairchild

File Size:

85.87 KB

Description:

P-channel mosfet.

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NDH854P P-Channel MOSFET Fairchild

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