Description
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
Features
- N-Channel 2.8 A, 30 V,RDS(ON)=0.07Ω @ VGS=10 V RDS(ON)=0.1Ω @ VGS=4.5 V P-Channel -2.2 A,-30 V, RDS(ON)=0.11Ω @ VGS=-10 V RDS(ON)=0.18 Ω @ VGS=-4.5 V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. ___________________________________________________________________________________
5
4 3 2
1
6
7 8
Absolute Maximum.
NDH8520C_FairchildSemiconductor.pdf
