NDH8521C Datasheet (Fairchild) - Dual N&P-Channel MOSFET

NDH8521C, Dual N&P-Channel MOSFET

These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

These devices

NDH8521C Features

* N-Ch 3.8 A, 30 V, RDS(ON)=0.033Ω @ VGS=10 V RDS(ON)=0.05 Ω @ VGS=4.5 V P-Ch -2.7 A, -30 V,RDS(ON)=0.07 Ω @ VGS=-10 V RDS(ON)=0.115 Ω @ VGS=-4.5 V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely