Description
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
Features
- N-Ch 3.8 A, 30 V, RDS(ON)=0.033Ω @ VGS=10 V RDS(ON)=0.05 Ω @ VGS=4.5 V P-Ch -2.7 A, -30 V,RDS(ON)=0.07 Ω @ VGS=-10 V RDS(ON)=0.115 Ω @ VGS=-4.5 V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. ________________________________________________________________________________
5 6 7 8
4 3 2 1
Absolute Maximum Ratings.
NDH8521C_FairchildSemiconductor.pdf
