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NDH8521C Dual N&P-Channel MOSFET

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Description

May 1997 NDH8521C Dual N & P-Channel Enhancement Mode Field Effect Transistor General .
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS techno.

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Features

* N-Ch 3.8 A, 30 V, RDS(ON)=0.033Ω @ VGS=10 V RDS(ON)=0.05 Ω @ VGS=4.5 V P-Ch -2.7 A, -30 V,RDS(ON)=0.07 Ω @ VGS=-10 V RDS(ON)=0.115 Ω @ VGS=-4.5 V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely

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