NDH853N Datasheet (Fairchild)

NDH853N, N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

These devices are particul

NDH853N Features

* 7.6 A, 30 V. RDS(ON) = 0.017 Ω @ VGS = 10 V RDS(ON) = 0.025 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). Proprietary SuperSOTTM-8 small outline surface mount package with high power and current handling capability. ____________________________________________________________