NDH853N N-Channel MOSFET

Fairchild

Description

May 1997 NDH853N N-Channel Enhancement Mode Field Effect Transistor General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

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Datasheet Specifications

Part number: NDH853N
Manufacturer: Fairchild
File Size: 82.65 KB
Datasheet: NDH853N_FairchildSemiconductor.pdf
Description: N-Channel MOSFET

Features

* 7.6 A, 30 V. RDS(ON) = 0.017 Ω @ VGS = 10 V RDS(ON) = 0.025 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). Proprietary SuperSOTTM-8 small outline surface mount package with high power and current handling capability. ____________________________________________________________

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