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NDH853N

N-Channel MOSFET

NDH853N Features

* 7.6 A, 30 V. RDS(ON) = 0.017 Ω @ VGS = 10 V RDS(ON) = 0.025 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). Proprietary SuperSOTTM-8 small outline surface mount package with high power and current handling capability. ____________________________________________________________

NDH853N General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particul.

NDH853N Datasheet (82.65 KB)

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Datasheet Details

Part number:

NDH853N

Manufacturer:

Fairchild

File Size:

82.65 KB

Description:

N-channel mosfet.

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NDH853N N-Channel MOSFET Fairchild

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