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NDP408BE N-Channel Enhancement Mode Field Effect Transistor

NDP408BE Description

May 1994 NDP408A / NDP408AE / NDP408B / NDP408BE NDB408A / NDB408AE / NDB408B / NDB408BE N-Channel Enhancement Mode Field Effect Transistor General D.
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

NDP408BE Features

* 12 and 11A, 80V. RDS(ON) = 0.16 and 0.20Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/i

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Datasheet Details

Part number
NDP408BE
Manufacturer
Fairchild
File Size
73.06 KB
Datasheet
NDP408BE_FairchildSemiconductor.pdf
Description
N-Channel Enhancement Mode Field Effect Transistor

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N-Channel Enhancement Mode Field Effect Transistor Fairchild
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