* 12 and 11A, 80V. RDS(ON) = 0.16 and 0.20Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/i
NDP408BE
Fairchild
73.06 KB
N-channel enhancement mode field effect transistor.
May 1994
NDP408A / NDP408AE / NDP408B / NDP408BE NDB408A / NDB408AE / NDB408B / NDB408BE N-Channel Enhancement Mode Field Effect Transistor
General D.
📁 Related Datasheet
NDP408B N-Channel Enhancement Mode Field Effect Transistor (Fairchild)
NDP408 N-Channel Enhancement Mode Field Effect Transistor (Fairchild)
NDP408A N-Channel Enhancement Mode Field Effect Transistor (Fairchild)
NDP408AE N-Channel Enhancement Mode Field Effect Transistor (Fairchild)
NDP4050 N-Channel Enhancement Mode Field Effect Transistor (Fairchild)
NDP4050L N-Channel Logic Level Enhancement Mode Field Effect Transistor (Fairchild)
NDP4060 N-Channel Enhancement Mode Field Effect Transistor (Fairchild)
NDP4060L N-Channel Logic Level Enhancement Mode Field Effect Transistor (Fairchild)
NDP410A N-Channel Enhancement Mode Field Effect Transistor (Fairchild)
NDP410AE N-Channel Enhancement Mode Field Effect Transistor (Fairchild)
