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30N60B3D - HGTG30N60B3D

Fairchild Semiconductor

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Datasheet Details

Part number	30N60B3D
Manufacturer	Fairchild ↗ Semiconductor
File Size	192.78 KB
Description	HGTG30N60B3D
Datasheet	30N60B3D-FairchildSemiconductor.pdf

30N60B3D Product details

Features

of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49170. The diode used in anti-parallel with the IGBT is the development type TA49053. The IGBT is ideal for many high voltage switching.

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Published: Aug 26, 2015 |