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FDD4141-F085 P-Channel PowerTrench MOSFET

FDD4141-F085 Description

FDD4141_F085 P-Channel PowerTrench® MOSFET November 2013 FDD4141_F085 P-Channel PowerTrench® MOSFET -40V, -50A, 12.3mΩ .
This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss.

FDD4141-F085 Features

* Max rDS(on) = 12.3mΩ at VGS = -10V, ID = -12.7A
* Max rDS(on) = 18.0mΩ at VGS = -4.5V, ID = -10.4A
* High performance trench technology for extremely low rDS(on)
* Qualified to AEC Q101

FDD4141-F085 Applications

* and optimized switching performance capability reducing power dissipation losses in converter/inverter applications. Applications
* Inverter
* Power Supplies S D G S G D -P A52 K TO -2 (T O -252) D MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS Paramet

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P-Channel PowerTrench MOSFET Fairchild Semiconductor
Fairchild Semiconductor FDD4141-F085-like datasheet