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FQI90N08 80V N-Channel MOSFET

FQI90N08 Description

FQB90N08 / FQI90N08 January 2001 QFET FQB90N08 / FQI90N08 80V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQI90N08 Features

* 71A, 80V, RDS(on) = 0.016Ω @VGS = 10 V Low gate charge ( typical 84 nC) Low Crss ( typical 200 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " "

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80V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FQI90N08-like datasheet