FQP13N10L - N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

12.8 A, 100 V, RDS(on) = 180 mΩ (Max. ) @ VGS = 10 V, ID = 6.4 A.
Low Gate Charge (Typ. 8.7 nC).
Low Crss (Typ. 20 pF).
100% Avalanche Tested.
175°C Maximum Junction Temperature Rating D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Sou.

📁 Related Datasheet

📌 All Tags

Fairchild Semiconductor FQP13N10L-like datasheet

FQP13N10L Stock/Price