FQP4N20L - N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology..

3.8 A, 200 V, RDS(on) = 1.35 Ω (Max. ) @ VGS = 10 V, ID = 1.9 A.
Low Gate Charge (Typ. 4.0 nC).
Low Crss (Typ. 6.0 pF).
100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repet.

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